| 摘要 |
<p>Systems and methods for detecting and improving writeability of a static random access memory (SRAM) cell. A bias voltage value corresponding to an operating condition, such as, a process, a voltage, or a temperature operation condition that indicates a cell write failure condition of an external SRAM array comprising the SRAM cell is generated. This bias voltage value is applied to word lines of SRAM cells in a model SRAM array. A first delay for a trigger signal rippled through the model SRAM array is detected and compared to a reference delay. A write assist indication is generated if the first delay is greater than or equal to the reference delay. Based on the write assist indication, a write assist is provided to the SRAM cell.</p> |
