发明名称 |
Capacitive sensor integrated onto semiconductor circuit |
摘要 |
There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad (520) on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer (530) onto the bottom electrode layer and the landing pad; creating a via (540) through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer (550) onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad. |
申请公布号 |
EP2755023(A1) |
申请公布日期 |
2014.07.16 |
申请号 |
EP20130305026 |
申请日期 |
2013.01.11 |
申请人 |
MEAS FRANCE |
发明人 |
GUILLEMET, JEAN-PAUL;DRLJACA, PREDRAG;BEELER, DANIEL;GALLORINI, ROMUALD;DUCERE, VINCENT |
分类号 |
G01N27/22 |
主分类号 |
G01N27/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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