发明名称 PROCESSING SYSTEM FOR PRODUCING A NEGATIVE ION PLASMA
摘要 <p>A processing system for producing a negative ion plasma is described, wherein a quiescent plasma having negatively-charged ions is produced. The processing system comprises a first chamber region for generating plasma using a first process gas, and a second chamber region separated from the first chamber region with a separation member. Electrons from plasma in the first region are transported to the second region to form quiescent plasma through collisions with a second process gas. A pressure control system coupled to the second chamber region is utilized to control the pressure in the second chamber region such that the electrons from the first chamber region undergo collision-quenching with the second process gas to form less energetic electrons that produce the quiescent plasma having negatively-charged ions.</p>
申请公布号 KR101419975(B1) 申请公布日期 2014.07.16
申请号 KR20107008983 申请日期 2008.09.22
申请人 发明人
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
代理机构 代理人
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