Method and apparatus for plasma dicing a semi-conductor wafer

摘要

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

主权项

1. A method for plasma dicing a substrate, the method comprising:
providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; providing the substrate having a top surface and a bottom surface, the top surface of the substrate having a plurality of device structures and street areas, the plurality of device structures having a protective material while the street areas remain unprotected, the substrate being mounted on a support film on a frame to form a work piece; providing an electrostatic chuck within said work piece support; loading the work piece with the protected plurality of device structures and the unprotected street areas on the top surface of the substrate facing upward onto the work piece support; generating a plasma through the plasma source; etching the unprotected street areas on the top surface of the substrate of the work piece through the generated plasma; providing an RF power source coupled to the work piece support, said RF power source generating an RF frequency to the substrate during the plasma etching step; varying the RF frequency from 100's of MHz down to a few hundred kHz during the plasma etching step; electrostatically clamping a portion of the support film that is exposed to the generated plasma during the plasma etching step using said electrostatic chuck; electrostatically clamping the substrate during the plasma etching step using said electrostatic chuck; cooling the portion of the support film that is exposed to the generated plasma during the plasma etching step through said electrostatic chuck during the plasma etching step; and cooling the bottom surface of the substrate through said electrostatic chuck during the plasma etching step.