发明名称 Packaged semiconductor devices and packaging devices and methods
摘要 Packaged semiconductor devices and packaging devices and methods are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a first integrated circuit die that is coupled to a first surface of a substrate that includes through-substrate vias (TSVs) disposed therein. A conductive ball is coupled to each of the TSVs on a second surface of the substrate that is opposite the first surface of the substrate. A second integrated circuit die is coupled to the second surface of the substrate, and a molding compound is formed over the conductive balls, the second integrated circuit die, and the second surface of the substrate. The molding compound is removed from over a top surface of the conductive balls, and the top surface of the conductive balls is recessed. A redistribution layer (RDL) is formed over the top surface of the conductive balls and the molding compound.
申请公布号 US8778738(B1) 申请公布日期 2014.07.15
申请号 US201313770909 申请日期 2013.02.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Jing-Cheng;Tsai Po-Hao
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. A method of packaging a semiconductor device, the method comprising: providing a first integrated circuit die, the first integrated circuit die being coupled to a first surface of a substrate including a plurality of through-substrate vias (TSVs) disposed therein; coupling a conductive ball to each of the plurality of TSVs on a second surface of the substrate, the second surface being opposite the first surface of the substrate; coupling a second integrated circuit die to the second surface of the substrate; forming a molding compound over the conductive balls, the second integrated circuit die, and the second surface of the substrate; removing the molding compound from over a top surface of the conductive balls; recessing the top surface of the conductive balls; and forming a redistribution layer (RDL) over the top surface of the conductive balls and the molding compound.
地址 Hsin-Chu TW