发明名称 MAGNETIC MEMORY ELEMENT WITH MULTI-DOMAIN STORAGE LAYER
摘要 An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.
申请公布号 KR101419788(B1) 申请公布日期 2014.07.15
申请号 KR20110114073 申请日期 2011.11.03
申请人 发明人
分类号 G11C11/15 主分类号 G11C11/15
代理机构 代理人
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