Enriched silicon precursor compositions and apparatus and processes for utilizing same

摘要

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

主权项

1. A dopant gas composition supply for ion implantation of silicon, said supply being selected from the group consisting of:
(A) a gas storage and dispensing vessel containing a silicon dopant composition comprising silicon dopant gas in mixture with supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the silicon dopant composition comprises at least one gaseous silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si; and (B) a gas supply kit comprising (i) a first gas storage and dispensing vessel containing silicon dopant gas, and (ii) a second gas storage and dispensing vessel holding supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein at least one of the silicon dopant gas and, when present, a co-species gas, is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si.