发明名称 Two terminal memcapacitor device
摘要 A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
申请公布号 US8779848(B2) 申请公布日期 2014.07.15
申请号 US200913383981 申请日期 2009.08.28
申请人 Hewlett-Packard Development Company, L.P. 发明人 Pickett Matthew D.;Borghetti Julien;Yang Jianhua
分类号 G11C11/00;G11C11/24;H01L29/167;H01L49/02 主分类号 G11C11/00
代理机构 代理人
主权项 1. A memcapacitor device, comprising: a first electrode and a second electrode; a memcapacitive matrix interposed between said first electrode and said second electrode; deep level dopants contained within said memcapacitive matrix, said deep level dopants having a first decay time constant; and shallow level dopants contained within said memcapacitive matrix, said shallow level dopants having a second decay time constant which is substantially shorter than said first decay time constant; in which a capacitance of said memcapacitor device depends upon an initial voltage applied across said memcapacitive matrix and a time dependent change in capacitance of said memcapacitor device depends upon said first decay time constant.
地址 Houston TX US