Structures and methods to enhance copper metallization

摘要

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.

主权项

1. A semiconductor structure comprising:
an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound; an inhibiting layer above and on the insulator layer, the inhibiting layer contacting the insulator layer, wherein the inhibiting layer includes a second substance, wherein the second substance is selected from a group consisting of a transition metal, aluminum, and a representative metal, and wherein the inhibiting layer includes a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration; and a copper metallization layer above and on the inhibiting layer, the copper metallization layer comprising a copper layer, the copper layer consisting essentially of copper, the copper metallization layer disposed directly above the insulator layer.