Semiconductor integrated circuit device

摘要

Also in a semiconductor integrated circuit device including a copper embedded wiring as a main wiring layer, generally, the uppermost-layer wiring layer is often an aluminum-based pad layer in order to ensure wire bonding characteristics. The aluminum-based pad layer is also generally used as a wiring layer (general intercoupling wiring such as power source wiring or signal wiring). However, such a general intercoupling wiring has a relatively large wiring length. This causes a demerit for the device to be susceptible to damages during a plasma treatment due to the antenna effect, and other demerits. With the present invention, in a semiconductor integrated circuit device including a metal multilayer wiring system having a lower-layer embedded type multilayer wiring layer and an upper-layer non-embedded type aluminum-based pad metal layer, the non-embedded type aluminum-based pad metal layer substantially does not have a power supply ring wiring.

主权项

1. A semiconductor integrated circuit device comprising:
(a) a semiconductor substrate having a first main surface; (b) a plurality of MISFETs arranged over the first main surface of the semiconductor substrate; (c) an embedded type multilayer wiring layer arranged over the first main surface of the semiconductor substrate and over the MISFETs; (d) a non-embedded type aluminum-based pad metal layer arranged over the embedded type multilayer wiring layer, wherein the non-embedded type aluminum-based pad metal layer does not have a power supply ring wiring; (e) a plurality of metal bonding pads arranged as parts of the non-embedded type aluminum-based pad metal layer; (f) a final passivation film formed at a layer above the non-embedded type aluminum-based pad metal layer; (g) a pad opening arranged in the final passivation film over each of the metal bonding pads; and (h) a power supply ring wiring arranged as a part of an embedded type uppermost-layer wiring layer of the embedded type multilayer wiring layer.