Semiconductor memory device

摘要

In the semiconductor memory device, one of a source and a drain of a first transistor is connected to one of a source and a drain of a second transistor, a gate of the first transistor is connected to one of a source and a drain of a third transistor and one of a pair of capacitor electrodes included in a capacitor, the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are connected to a bit line, the other of the pair of capacitor electrodes included in the capacitor is connected to a common wiring, and the common wiring is grounded (GND). The common wiring has a net shape when seen from the above, and the third transistor is provided in a mesh formed by the common wiring.

主权项

1. A semiconductor memory device comprising:
a first transistor; a second transistor; a third transistor comprising an oxide semiconductor film; and a capacitor comprising:
a conductive film facing side surfaces of one of a source electrode and a drain electrode of the third transistor; anda first insulating film between the conductive film and the one of the source electrode and the drain electrode of the third transistor, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and wherein the one of the source electrode and the drain electrode of the third transistor is electrically connected to a gate electrode of the first transistor.