SOI-based CMOS imagers employing flash gate/chemisorption processing

摘要

A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide later is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.

主权项

1. A semiconductor device, comprising:
a silicon-on-insulator substrate including an insulator layer and a seed layer substantially overlying the insulator layer; a semiconductor substrate grown substantially overlying the seed layer; an ultrathin oxide layer substantially underlying the semiconductor substrate; a mono layer of metal substantially underlying the ultrathin oxide layer, and at least one dopant diffuses into the semiconductor substrate such that, at completion of the growing of the semiconductor substrate, there exists a net dopant concentration profile in the seed layer and the semiconductor substrate which has a minimum value at an interface of the insulating layer and the seed layer and which increases monotonically from the minimum value a predetermined distance within the seed layer and the semiconductor substrate.