发明名称 Correcting data in a memory
摘要 Methods of correcting data in a memory, and memories adapted to correct data, include prioritizing error correction of the read data in response to locations and likely states of known bad or questionable data positions of a segment of a memory array selected for reading.
申请公布号 US8782493(B2) 申请公布日期 2014.07.15
申请号 US201313964682 申请日期 2013.08.12
申请人 Micron Technology, Inc. 发明人 Keays Brady L.;Swaminathan Shuba;Radke William H.
分类号 G11C29/00 主分类号 G11C29/00
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A memory comprising: a memory array containing a plurality of memory cells arranged into a plurality of segments; and a record of locations and likely states of known bad or questionable data positions in the plurality of segments; wherein the memory is adapted to read data and associated ECC codes from a selected segment of the memory array, and to error check the read data utilizing the associated ECC codes; and wherein the memory is adapted, when the error check detects an error in the read data, to prioritize error correction of the read data in response to the locations and likely states of the known bad or questionable data positions of the selected segment.
地址 Boise ID US