发明名称 |
Solder bump connections |
摘要 |
Solder bump connections and methods for fabricating solder bump connections. The method includes forming a layer stack containing first and second conductive layers, forming a dielectric passivation layer on a top surface of the second conductive layer, and forming a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer. The method further includes forming a conductive plug in the via opening. The solder bump connection includes first and second conductive layers comprised of different conductors, a dielectric passivation layer on a top surface of the second conductive layer, a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer, and a conductive plug in the via opening. |
申请公布号 |
US8778792(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201313758386 |
申请日期 |
2013.02.04 |
申请人 |
International Business Machines Corporation |
发明人 |
Daubenspeck Timothy H.;Gambino Jeffrey P.;Misra Ekta;Muzzy Christopher D.;Sauter Wolfgang;Scott George J. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
Wood, Herron & Evans, LLP |
代理人 |
Wood, Herron & Evans, LLP ;Cain David |
主权项 |
1. A method of fabricating a solder bump connection, the method comprising:
forming a layer stack containing a first conductive layer and a second conductive layer on the first conductive layer; forming a dielectric passivation layer in an island region on a top surface of the second conductive layer, wherein the island region includes an inner sidewall and an outer sidewall; forming a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer and circumscribed by the inner sidewall of the island region; forming a conductive plug in the via opening that is coupled by the second conductive layer with the first conductive layer; and after the conductive plug is formed, removing field regions of the layer stack outside of the outer sidewall of the island region with a selective wet chemical etching process. |
地址 |
Armonk NY US |