发明名称 |
Extremely non-degenerate two photon absorption optical sensing method, apparatus and applications |
摘要 |
An extremely non-degenerate two photon absorption (END-2PA) method and apparatus provide for irradiating a semiconductor material substrate simultaneously with two photons each of different energy less than a bandgap energy of the semiconductor material substrate but in an aggregate greater than the bandgap energy of the semiconductor material substrate. A ratio of a higher energy photon energy to a lower energy photon energy is at least about 3.0. Alternatively, or as an adjunct, the higher energy photon has an energy at least about 75% of the bandgap energy and the lower energy photon has an energy no greater than about 25% of the bandgap energy. |
申请公布号 |
US8778703(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201213680408 |
申请日期 |
2012.11.19 |
申请人 |
University of Central Florida Research Foundation, Inc. |
发明人 |
Van Stryland Eric;Hagan David J. |
分类号 |
H01L21/268 |
主分类号 |
H01L21/268 |
代理机构 |
Bond, Schoeneck & King, PLLC |
代理人 |
Greener William;Szecy Alek P.;Bond, Schoeneck & King, PLLC |
主权项 |
1. A method, comprising:
providing a semiconductor material substrate having a bandgap energy; and irradiating the semiconductor material substrate simultaneously with two photons of different energy each individually less than the bandgap energy, but in an aggregate greater than the bandgap energy, where: a higher energy photon has an energy at least about 75 percent of the bandgap energy; and a lower energy photon has an energy no greater than about 25 percent of the bandgap energy. |
地址 |
Ithaca NY US |