发明名称 |
Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion |
摘要 |
A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer. |
申请公布号 |
US8778598(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201213711999 |
申请日期 |
2012.12.12 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kang Yool;Lee Suk-joo;Lee Jung-hyeon;Yi Shi-yong |
分类号 |
G03F7/40 |
主分类号 |
G03F7/40 |
代理机构 |
Myers Bigel Sibley & Sajovec, P.A. |
代理人 |
Myers Bigel Sibley & Sajovec, P.A. |
主权项 |
1. A method of forming fine patterns of a semiconductor device, the method comprising:
forming a plurality of first mask patterns on a substrate; forming a capping film on exposed surface areas of each of the plurality of first mask patterns, wherein the capping film comprises an acid source comprising one of acid, a first photoacid generator having a chromophore group, and a thermoacid generator; forming a second mask layer on the capping film, wherein the second mask layer comprises polymer having an acid-labile group and a second photoacid generator not having a chromophore group; forming a plurality of acid diffused regions within the second mask layer by diffusing acid obtained from the acid source from the capping film into the second mask layer; removing the acid diffused regions of the second mask layer; and forming a plurality of second mask patterns corresponding to residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer. |
地址 |
KR |