| 发明名称 | Perovskite manganese oxide thin film | ||
| 摘要 | An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19≧m≧2, and having an [100] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO—MnO2—BaO—MnO2-LnO . . . in the [100] axis direction of the substrate. The perovskite manganese (Mn) oxide thin film provided thoroughly exploits the resistance changes caused by charge and orbital ordering in the perovskite manganese oxide. | ||
| 申请公布号 | US8778513(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201213816738 | 申请日期 | 2012.03.02 |
| 申请人 | Fuji Electric Co., Ltd. | 发明人 | Ogimoto Yasushi |
| 分类号 | C30B29/22;C01G45/02;C01G45/12;C23C14/00;C23C14/08;C30B23/02;H01L21/02;H01L29/04;H01L29/24;H01L45/00 | 主分类号 | C30B29/22 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. An article including a perovskite manganese (Mn) oxide thin film, comprising: a substrate having an oriented perovskite structure that is (m10) oriented, where 19≧m≧2, and having an [100] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice comprised of barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO—MnO2—BaO—MnO2-LnO . . . in the [100] axis direction of the substrate. | ||
| 地址 | Kawasaki-Shi JP | ||