发明名称 Writing circuit for a magnetoresistive memory cell
摘要 According to embodiments of the present invention, a writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first connecting terminal configured to provide a first electrical signal to switch a variable magnetization orientation of the free magnetic layer from a first magnetization orientation to a second magnetization orientation; a second connecting terminal configured to provide a second electrical signal to switch the magnetization orientation from the second magnetization orientation to the first magnetization orientation; and a sourcing switch configured to provide for a write operation a connection of the first or second connecting terminal to a node coupleable to the magnetoresistive memory cell. The first and second electrical signals have different amplitudes, and the first and second electrical signals are of the same polarity. Further embodiments relate to a memory cell arrangement and a method of writing into a target magnetoresistive memory cell.
申请公布号 US8780618(B2) 申请公布日期 2014.07.15
申请号 US201213708872 申请日期 2012.12.07
申请人 Agency for Science, Technology and Research 发明人 Lua Yan Hwee Sunny;Mani Aarthy
分类号 G11C11/00 主分类号 G11C11/00
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A writing circuit for a magnetoresistive memory cell having a fixed magnetic layer and a free magnetic layer, the writing circuit comprising: a first connecting terminal configured to provide a first electrical signal to switch a variable magnetization orientation of the free magnetic layer from a first magnetization orientation to a second magnetization orientation; a second connecting terminal configured to provide a second electrical signal to switch the magnetization orientation of the free magnetic layer from the second magnetization orientation to the first magnetization orientation; and a sourcing switch configured to provide for a write operation a direct connection of one of the first connecting terminal or the second connecting terminal to a node coupleable to the magnetoresistive memory cell, wherein the first electrical signal and the second electrical signal have different amplitudes; andwherein the first electrical signal and the second electrical signal are of the same polarity.
地址 Singapore SG