发明名称 Storing data in a non-volatile latch
摘要 Storing data in a non-volatile latch may include applying a bias voltage to a memristor pair in electrical communication with at least one logic gate and applying a gate voltage to a transmission gate to allow an input voltage to be applied to the at least one logic gate where the input voltage is greater than the bias voltage and the input voltage determines a resistance state of the memristor pair.
申请公布号 US8780610(B2) 申请公布日期 2014.07.15
申请号 US201213560058 申请日期 2012.07.27
申请人 Hewlett-Packard Development Company, L.P. 发明人 Ribeiro Gilberto Medeiros;Pickett Matthew D.
分类号 G11C11/00;G11C13/00 主分类号 G11C11/00
代理机构 代理人
主权项 1. A non-volatile memory circuit, comprising: a memristor pair in electrical communication with a logic gate; a bias voltage source in communication with said memristor pair; and a transmission gate positioned to permit an input signal to pass to said logic gate.
地址 Houston TX US