发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.
申请公布号 US8779569(B2) 申请公布日期 2014.07.15
申请号 US201113522853 申请日期 2011.01.17
申请人 Rohm Co., Ltd. 发明人 Kimura Akihiro;Yamaguchi Tsunemori
分类号 H01L23/495;H01L21/00 主分类号 H01L23/495
代理机构 Hamre, Schumann, Mueller & Larson, P.C. 代理人 Hamre, Schumann, Mueller & Larson, P.C.
主权项 1. A semiconductor device comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the first insulating material is provided on the island, and the second insulating material is held in contact with and fixed to: the second main surface; side surfaces connected to both the first main surface and the second main surface; the first insulating material; and the island.
地址 Kyoto JP