| 发明名称 | SRAM cell comprising FinFETs | ||
| 摘要 | A Static Random Access Memory (SRAM) cell includes a first pull-up Fin Field-Effect Transistor (FinFET) and a second pull-up FinFET, and a first pull-down FinFET and a second pull-down FinFET forming cross-latched inverters with the first pull-up FinFET and the second pull-up FinFET. A first pass-gate FinFET is connected to drains of the first pull-up FinFET and the first pull-down FinFET. A second pass-gate FinFET is connected to drains of the second pull-up FinFET and the second pull-down FinFET, wherein the first and the second pass-gate FinFETs are p-type FinFETs. A p-well region is in a center region of the SRAM cell and underlying the first and the second pull-down FinFETs. A first and a second n-well region are on opposite sides of the p-well region. | ||
| 申请公布号 | US8779528(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201213691187 | 申请日期 | 2012.11.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Liaw Jhon-Jhy |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 | 主分类号 | H01L29/76 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A Static Random Access Memory (SRAM) cell comprising: a first pull-up Fin Field-Effect Transistor (FinFET) and a second pull-up FinFET; a first pull-down FinFET and a second pull-down FinFET forming cross-latched inverters with the first pull-up FinFET and the second pull-up FinFET; a first pass-gate FinFET connected to drains of the first pull-up FinFET and the first pull-down FinFET; a second pass-gate FinFET connected to drains of the second pull-up FinFET and the second pull-down FinFET, wherein the first and the second pass-gate FinFETs are p-type FinFETs; a p-well region in a center region of the SRAM cell and underlying the first and the second pull-down FinFETs; and a first and a second n-well region on opposite sides of the p-well region. | ||
| 地址 | Hsin-Chu TW | ||