Confined process volume PECVD chamber

摘要

An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

主权项

1. An apparatus for processing a semiconductor substrate, comprising:
a processing chamber having a chamber body; a substrate support disposed in the processing chamber and defining an upper portion of the processing chamber and a lower portion of the processing chamber; a lid assembly coupled to the chamber body, the lid assembly comprising a conductive gas distributor coupled to RF power and a powered electrode insulated from the conductive gas distributor, wherein the powered electrode is disposed between a first insulator and a second insulator, wherein the first insulator insulates the powered electrode from the conductive gas distributor, and wherein the second insulator insulates the powered electrode from the chamber body; and a shield member disposed in the lower portion of the processing chamber, the shield member being positionable inside the processing chamber by an extension of the shield member outside the processing chamber.