发明名称 |
Polishing method and method for fabricating semiconductor device |
摘要 |
A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad. |
申请公布号 |
US8778802(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US200711802532 |
申请日期 |
2007.05.23 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Fukushima Dai;Minamihaba Gaku;Yano Hiroyuki |
分类号 |
C03C15/00;C03C25/68;H01L21/302;H01L21/461 |
主分类号 |
C03C15/00 |
代理机构 |
Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
代理人 |
Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
主权项 |
1. A polishing method, comprising:
causing a polishing pad arranged on a turn table to rotate together with the turn table; and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad, wherein the chemical fluid is supplied from a substantial center of the polishing pad toward an outer side of the polishing pad and from a nozzle inclined such that an angle between the surface of the polishing pad and a direction of the nozzle is 60 degrees or less such that the chemical fluid contacts with the surface of the polishing pad from a diagonal direction, a nozzle opening being arranged at a substantial center position of the polishing pad and directed toward the outer side of the polishing pad and being arranged toward the fore side of the substrate and an upstream direction of a rotation direction of the polishing pad with respect to the substrate. |
地址 |
Tokyo JP |