Integrated circuits based on aligned nanotubes

摘要

Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.

主权项

1. A method comprising:
growing aligned carbon nanotubes on a substrate of a first type; transferring the aligned carbon nanotubes onto a substrate of a second type by (i) repeatedly applying film and tape to form a stack of layers on the substrate of the second type, wherein each of the layers in the stack comprises at least some of the aligned carbon nanotubes in the film of that layer, and (ii) removing the film from the stack to leave the transferred carbon nanotubes on the substrate of the second type; and fabricating at least one device using the transferred carbon nanotubes on the substrate of the second type.