Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition

摘要

A chemical amplification resist composition contains: (A) a polymer compound having a phenolic hydroxyl group and a group formed by substituting a substituent for a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and satisfying the following (a) to (c) at the same time: (a) the polydispersity is 1.2 or less, (b) the weight average molecular weight is from 2,000 to 6,500, and (c) the glass transition temperature (Tg) is 140° C. or more.

主权项

1. A chemical amplification resist composition comprising:
(A) a polymer compound having a phenolic hydroxyl group and a group formed by substituting a substituent for a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and satisfying the following (a) to (c) at the same time: (a) the polydispersity is 1.2 or less, (b) the weight average molecular weight is from 2,000 to 6,500, and (c) the glass transition temperature (Tg) is 140° C. or more; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a compound capable of crosslinking the polymer compound (A) by the action of an acid, wherein the polymer compound (A) contains a repeating unit represented by the following formula (II) in an amount of 10 to 90 mol% based on all repeating units in the polymer compound (A): Wherein R2 represents a hydrogen atom, a methyl group which may have a substituent, or a halogen atom, Ar2 represents an aromatic ring group, and m represents an integer of 1 or more.