| 发明名称 |
PB-free solder bumps with improved mechanical properties |
| 摘要 |
An electronic device, comprising a semiconductor substrate having a first metal pad formed thereover, a device package substrate having a second metal pad formed thereover, and, a doped solder bump. The doped solder bump is located between and in contact with said first and second metal pads. The doped solder bump consisting of Sn, one or both of Ag and Cu, and a fourth row transition metal dopant in a concentration range from 0.35 wt. % to 2 wt. %. |
| 申请公布号 |
US8779587(B2) |
申请公布日期 |
2014.07.15 |
| 申请号 |
US200813063181 |
申请日期 |
2008.09.16 |
| 申请人 |
Agere Systems LLC |
发明人 |
Bachman Mark;Osenbach John W. |
| 分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device, comprising:
a semiconductor substrate having a first metal pad formed thereover; a device package substrate having a second metal pad formed thereover; and a doped solder bump located between and in contact with said first and second metal pads, said doped solder bump consisting of Sn, one or both of Ag and Cu, and a fourth row transition metal dopant, wherein said doped solder bump has a concentration of said dopant in a range of about 0.1 wt % to about 2 wt %, with a deviation of 20% or less of an average of said concentration throughout said doped solder bump. |
| 地址 |
Wilmington DE US |
