发明名称 Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
摘要 Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.
申请公布号 US8779542(B2) 申请公布日期 2014.07.15
申请号 US201213717080 申请日期 2012.12.17
申请人 Intersil Americas LLC 发明人 Dyer Kenneth;Lee Eric;Lin Xijian
分类号 H01L31/0203;H01L21/00;H01L27/146 主分类号 H01L31/0203
代理机构 Vierra Magen Marcus LLP 代理人 Vierra Magen Marcus LLP
主权项 1. A photodetector, comprising: a plurality of photodiode regions; an optical filter covering one or more of the photodiode regions; a plurality of metal layers located between the photodiode regions and the optical filter, wherein the plurality of metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions; and one or more inter-level dielectric layers that separate the metal layers from one another; wherein each of the metal layers includes one or more metal portions and one or more dielectric portions; and wherein the uppermost metal layer is devoid of any metal portions underlying the optical filter.
地址 Milpitas CA US