Magnetic tunneling junction seed, capping, and spacer layer materials

摘要

In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

主权项

1. A magnetic element for a semiconductor device, comprising:
a first reference layer; a free layer; a first nonmagnetic spacer layer disposed between the first reference layer and the free layer; and a seed layer arranged beneath the first reference layer; wherein the seed layer comprises a binary, ternary, or multi-nary alloy oxide material, where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.