| 发明名称 | Enhanced dislocation stress transistor | ||
| 摘要 | A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the conduction channel and the at least one edge dislocation. | ||
| 申请公布号 | US8779477(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US200812191814 | 申请日期 | 2008.08.14 |
| 申请人 | Intel Corporation | 发明人 | Weber Cory;Liu Mark;Murthy Anand;Deshpande Hemant;Aubertine Daniel B. |
| 分类号 | H01L29/76 | 主分类号 | H01L29/76 |
| 代理机构 | Winkle, PLLC | 代理人 | Winkle, PLLC |
| 主权项 | 1. A device, comprising: a transistor formed on a semiconductor substrate, the transistor having a conduction channel; at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate; at least one free surface introduced above the conduction channel and the at least one edge dislocation. | ||
| 地址 | Santa Clara CA US | ||