发明名称 Epitaxial lift off in inverted metamorphic multijunction solar cells
摘要 The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.
申请公布号 US8778199(B2) 申请公布日期 2014.07.15
申请号 US201213465477 申请日期 2012.05.07
申请人 Emoore Solar Power, Inc. 发明人 Cornfeld Arthur;McGlynn Daniel;Varghese Tansen
分类号 B29D11/00;H01L31/0735;H01L31/0725;H01L31/18;H01L31/0687 主分类号 B29D11/00
代理机构 代理人
主权项 1. A method for manufacturing a solar cell using a process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, comprising: providing a first substrate of gallium arsenide; depositing a separation layer on said first substrate; depositing on the separation layer a sequence of epitaxial layers of semiconductor material forming a solar cell including: forming over the separation layer an upper first solar subcell having a first band gap and including a semiconductor contact layer; forming over said first solar subcell a middle second solar subcell having a second band gap smaller than said first band gap; forming a graded interlayer over said second solar subcell; and forming over said graded interlayer a lower third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell; mounting the first substrate and the sequence of epitaxial layers of semiconductor material on a flexible film; mechanically holding said first substrate against a bottom support of an etching apparatus; attaching a connecting link element that connects at least two opposed points on the periphery of the flexible film to an upper portion of the etching apparatus; introducing said solar cell having said flexible film bonded thereon into an etchant environment in said etching apparatus; etching said separation layer while applying mechanical tension to said connecting link element so as to remove said flexible film with said epitaxial layers from said first substrate; attaching the flexible film directly to a surrogate substrate by an electrostatic technique; depositing a contact metal layer over the semiconductor contact layer; lithographically processing the contact metal layer to form grid lines; attaching a cover glass over the grid lines; and removing the surrogate substrate.
地址 Albuquerque NM US