发明名称 |
Epitaxial lift off in inverted metamorphic multijunction solar cells |
摘要 |
The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate. |
申请公布号 |
US8778199(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201213465477 |
申请日期 |
2012.05.07 |
申请人 |
Emoore Solar Power, Inc. |
发明人 |
Cornfeld Arthur;McGlynn Daniel;Varghese Tansen |
分类号 |
B29D11/00;H01L31/0735;H01L31/0725;H01L31/18;H01L31/0687 |
主分类号 |
B29D11/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a solar cell using a process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, comprising:
providing a first substrate of gallium arsenide; depositing a separation layer on said first substrate; depositing on the separation layer a sequence of epitaxial layers of semiconductor material forming a solar cell including: forming over the separation layer an upper first solar subcell having a first band gap and including a semiconductor contact layer; forming over said first solar subcell a middle second solar subcell having a second band gap smaller than said first band gap; forming a graded interlayer over said second solar subcell; and forming over said graded interlayer a lower third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell; mounting the first substrate and the sequence of epitaxial layers of semiconductor material on a flexible film; mechanically holding said first substrate against a bottom support of an etching apparatus; attaching a connecting link element that connects at least two opposed points on the periphery of the flexible film to an upper portion of the etching apparatus; introducing said solar cell having said flexible film bonded thereon into an etchant environment in said etching apparatus; etching said separation layer while applying mechanical tension to said connecting link element so as to remove said flexible film with said epitaxial layers from said first substrate; attaching the flexible film directly to a surrogate substrate by an electrostatic technique; depositing a contact metal layer over the semiconductor contact layer; lithographically processing the contact metal layer to form grid lines; attaching a cover glass over the grid lines; and removing the surrogate substrate. |
地址 |
Albuquerque NM US |