| 发明名称 | Select devices for memory cell applications | ||
| 摘要 | Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more memory cells comprise a a select device structure including a two terminal select device having a current-voltage (I-V) profile associated therewith, and a non-ohmic device in series with the two terminal select device. The combined two terminal select device and non-ohmic device provide a composite I-V profile of the select device structure that includes a modified characteristic as compared to the I-V profile, and the modified characteristic is based on at least one operating voltage associated with the memory cell. | ||
| 申请公布号 | US8780607(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201113234771 | 申请日期 | 2011.09.16 |
| 申请人 | Micron Technology, Inc. | 发明人 | Wells David H.;Ramaswamy D. V. Nirmal |
| 分类号 | G11C11/00 | 主分类号 | G11C11/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A memory cell, comprising: a select device structure including: a two terminal select device having a current-voltage (I-V) profile associated therewith; anda non-ohmic device in series with the two terminal select device, wherein the combined two terminal select device and non-ohmic device provide a composite I-V profile of the select device structure that includes a modified characteristic as compared to the I-V profile; wherein the two terminal select device and the non-ohmic device are separate metal-semiconductor-metal (MSM) devices that share a common electrode; and wherein the modified characteristic is based on at least one operating voltage associated with the memory cell. | ||
| 地址 | Boise ID US | ||