Starting structure and protection component comprising such a starting structure

摘要

A structure for starting a semiconductor component including a porous silicon layer in the upper surface of a semiconductor substrate. This porous silicon layer is contacted, on its upper surface side, by a metallization and, on its lower surface side, by a heavily-doped semiconductor region.

主权项

1. A semiconductor device comprising:
a first structure, the first structure comprising a p-type porous silicon layer arranged between two conductive regions, wherein a lower surface side of the porous silicon layer is contacted by a heavily-doped p-type semiconductor region and an upper surface side of the porous silicon layer is directly contacted by a metallization region; and a second structure, the second structure comprising a thyristor, wherein at least a portion of the thyristor is configured to turn on when a voltage applied across the porous silicon layer exceeds a threshold voltage.