发明名称 Method for manufacturing the color controlled sapphire
摘要 Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere. Further, according to the present invention, a sapphire, which cannot be damaged by radiation and can be made to exhibit uniform colors, can be manufactured by performing the above processes repeatedly.
申请公布号 US8778463(B2) 申请公布日期 2014.07.15
申请号 US200812996755 申请日期 2008.06.12
申请人 发明人 Park Jae-Won;Ahn Ju-Hyung;Kim Young-chool;Han Jang-Min;Kim Junyeon
分类号 C23C14/48;C23C14/28;C23C14/30;C23C14/34 主分类号 C23C14/48
代理机构 Workman Nydegger 代理人 Workman Nydegger
主权项 1. A method of manufacturing a color-controlled sapphire, comprising steps of: (1) vaporizing chromium through sputtering or heating; (2) irradiating the vaporized chromium with electron beams or high-frequency waves to form the vaporized chromium into a plasma state having chromium ions formed from the vaporized chromium; (3) extracting the chromium ions from the plasma; (4) accelerating the chromium ions; (5) implanting the chromium ions into a sapphire; (6) heat-treating the sapphire implanted with the chromium ions at a temperature of 900˜1400° C. for 2˜36 hours in an oxygen atmosphere or in air; and (7) cooling the sapphire, wherein, in the step of implanting, energy of the chromium ions to be implanted is 50 keV˜1000 keV, and the chromium ions are implanted into the sapphire in an amount of 1×1015˜5×1017ions/cm2, and wherein a color imparted by implantation of the chromium ions in the sapphire is stable following heat-treating at 900˜1400° C. for 2˜36 hours.
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