摘要 |
Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere. Further, according to the present invention, a sapphire, which cannot be damaged by radiation and can be made to exhibit uniform colors, can be manufactured by performing the above processes repeatedly. |
主权项 |
1. A method of manufacturing a color-controlled sapphire, comprising steps of:
(1) vaporizing chromium through sputtering or heating; (2) irradiating the vaporized chromium with electron beams or high-frequency waves to form the vaporized chromium into a plasma state having chromium ions formed from the vaporized chromium; (3) extracting the chromium ions from the plasma; (4) accelerating the chromium ions; (5) implanting the chromium ions into a sapphire; (6) heat-treating the sapphire implanted with the chromium ions at a temperature of 900˜1400° C. for 2˜36 hours in an oxygen atmosphere or in air; and (7) cooling the sapphire, wherein, in the step of implanting, energy of the chromium ions to be implanted is 50 keV˜1000 keV, and the chromium ions are implanted into the sapphire in an amount of 1×1015˜5×1017ions/cm2, and wherein a color imparted by implantation of the chromium ions in the sapphire is stable following heat-treating at 900˜1400° C. for 2˜36 hours. |