| 发明名称 |
Device having an avalanche photo diode and a method for sensing photons |
| 摘要 |
A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. |
| 申请公布号 |
US8779543(B2) |
申请公布日期 |
2014.07.15 |
| 申请号 |
US201213621244 |
申请日期 |
2012.09.16 |
| 申请人 |
Technion Research and Development Foundation Ltd. |
发明人 |
Nemirovsky Yael;Savuskan Vitali;Bar-Lev Shefi Sharon;Brouk Igor;Visokolov Gil;Fenigstein Amos;Leitner Tomer |
| 分类号 |
H01L31/107 |
主分类号 |
H01L31/107 |
| 代理机构 |
|
代理人 |
Reches Oren |
| 主权项 |
1. A semiconductor device, comprising an avalanche photodiode (APD), the APD comprises:
a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. |
| 地址 |
Haifa IL |
