发明名称 Process for the manufacture of a high density ITO sputtering target
摘要 A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.
申请公布号 US8778234(B2) 申请公布日期 2014.07.15
申请号 US200912992067 申请日期 2009.05.07
申请人 Bizesp Limited 发明人 King Charles Edmund;Baluch Dosten
分类号 H01B1/02 主分类号 H01B1/02
代理机构 Hamilton DeSanctis & Cha 代理人 Hamilton DeSanctis & Cha
主权项 1. A method of forming an ITO slip for use in the manufacture of ITO sputtering targets, comprising: forming a slip of granulated ITO powder and water; wherein the slip includes a phosphorus compound in a concentration between 0.001% and 1% by weight.
地址 Oxford GB