Stacked memory device and method of repairing same

摘要

A stacked semiconductor memory device comprises memory cell array layers that are stacked in an inverted wedge shape and have different redundancy sizes from each other. The stacked semiconductor memory device has space for vertical connection between layers, a relatively small size, and a relatively high yield.

主权项

1. A stacked semiconductor memory device, comprising:
a semiconductor substrate; and a plurality of memory cell array layers stacked on the semiconductor substrate, wherein the plurality of memory cell array layers increase in area as they increase in distance from the semiconductor substrate, and wherein the memory cell array layers provide different amounts of redundant data storage.