发明名称 Magnetic memory system and methods in various modes of operation
摘要 A magnetic memory system includes a superconductor circuit and one or more magnetic memory elements to store data. To write data, a driver circuit in the superconductor circuit generates a magnetic signal for transmission over a superconductor link extending between the superconductor circuit and the magnetic memory element. To read data, a sensing circuit in the superconductor circuit monitors a superconductor link extending from sensing circuit to the magnetic memory element. The magnetic memory element can be a spin-transfer type magnetic memory element.
申请公布号 US8780616(B2) 申请公布日期 2014.07.15
申请号 US201213477970 申请日期 2012.05.22
申请人 Raytheon BBN Technologies Corp.;New York University 发明人 Ohki Thomas Akira;Kent Andrew
分类号 G11C11/16;G11C11/02 主分类号 G11C11/16
代理机构 Chapin IP Law, LLC 代理人 Chapin IP Law, LLC
主权项 1. A system comprising: a superconductor circuit to generate a magnetic signal; a magnetic memory element to store data; a link between the superconductor circuit and the magnetic memory element; and the superconductor circuit transmitting the magnetic signal to the magnetic memory element over the link to access the magnetic memory element; wherein the link between the superconductor circuit and the magnetic memory element is an electrically conductive link on which to convey the magnetic signal from the superconductor circuit to the magnetic memory element; wherein the electrically conductive link is a microstrip line; and where the microstrip line is fabricated in at least one layer of a hybrid electronic semiconductor chip in which the superconductor circuit and the magnetic memory element are fabricated.
地址 Cambridge MA US