发明名称 Systems, methods, and apparatus for voltage clamp circuits
摘要 Certain embodiments of the invention may include systems, methods and apparatus for voltage clamp circuits. According to an example embodiment of the invention, a voltage clamp circuit may include a first circuit portion electrically coupled to the output of at least one power source. The first circuit portion comprises a power semiconductor device having a first, second and a third node and one or more zener diodes electrically coupled to the first or the second node of the power semiconductor device. The voltage clamp circuit may further include a second circuit portion in electrical communication with the first circuit portion, where the second circuit portion comprises a resistor, a capacitor and a directional device, and where the second circuit portion connects to the one or more zener diodes to reduce peak voltage output between the second and the third node of the power semiconductor device.
申请公布号 US8780516(B2) 申请公布日期 2014.07.15
申请号 US201213466627 申请日期 2012.05.08
申请人 General Electric Conpany 发明人 Wagoner Robert Gregory;Tian Geng
分类号 H02H3/20;H02H9/04;H02H3/22;H02H9/00 主分类号 H02H3/20
代理机构 Sutherland Asbill & Brennan LLP 代理人 Sutherland Asbill & Brennan LLP
主权项 1. A system, comprising: a first circuit portion, the first circuit portion comprising a power semiconductor device and a series combination of a first zener diode and a second zener diode, wherein the power semiconductor device comprises a first node, a second node and a third node, and wherein a proximal end of the series combination of the first zener diode and the second zener diode is directly connected to the first node and a distal end of the series combination of the first zener diode and the second zener diode is directly connected to the second node of the power semiconductor device; and a second circuit portion comprising a first resistor, a capacitor, and at least one of a diode or a transistor, wherein the first resistor is connected in parallel with the capacitor to form a sub-circuit, and the sub-circuit is connected to the one of a diode or a transistor, the second circuit portion connected in parallel with the first zener diode of the first circuit portion to clamp a peak voltage between the first node and the third node of the power semiconductor device.
地址 Schenectady NY US