Method for manufacturing semiconductor device and semiconductor device

摘要

According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of electrode structures above a substrate. The method includes forming an insulating film on the plurality of electrode structures to make a gap between mutually-adjacent electrode structures. The method includes forming a silicon nitride film having compressive stress above the insulating film. The method includes forming a planarization film above the silicon nitride film. The method includes planarizing a surface of the planarization film by polishing by CMP (chemical mechanical polishing) method.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a plurality of electrode structures above a substrate; forming an insulating film on the plurality of electrode structures to make a gap between mutually-adjacent electrode structures; forming a silicon nitride film having compressive stress above the insulating film; forming a planarization film above the silicon nitride film; and planarizing a surface of the planarization film by polishing by CMP (chemical mechanical polishing) method; wherein the forming of the electrode structures includes:
forming a charge storage layer above the substrate;forming an intermediate insulating film above the charge storage layer; andforming a control electrode above the intermediate insulating film; the forming of the control electrode includes:
forming a silicon layer above the intermediate insulating film; andforming a metal layer above the silicon layer; a trench is formed above the substrate by removing a portion of the insulating film and a portion of the electrode structures after the forming of the insulating film on the electrode structures; a silicon nitride barrier film is formed above the insulating film and at an inner wall of the trench; a buried film is formed inside the trench and above the silicon nitride barrier film; the silicon nitride film having the compressive stress is formed above the buried film; and a silicon oxide film is formed as the buried film by thermal CVD method.