Method for producing a structure element and semiconductor component comprising a structure element

摘要

A semiconductor component includes a semiconductor body having a surface and a cutout in the semiconductor body. The cutout extends from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface. The cutout has a base and at least one sidewall. The component further includes a layer on the surface of the semiconductor body and in the cutout. The layer forms a well above the cutout. The well has a well base, a well edge and at least one well sidewall. The at least one well sidewall forms an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body. The layer has at least one edge which, proceeding from the well edge, extends in the direction of the surface of the semiconductor body.

主权项

1. A method for producing a structure element on a surface of a semiconductor body, the method comprising:
providing a semiconductor body having a surface; producing a cutout at the surface, the cutout extending from surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface, the cutout having a base, at least one sidewall and an edge at the intersection of the surface and the at least one sidewall; producing a first auxiliary layer on the surface of the semiconductor body and in the cutout so that the first auxiliary layer forms a well above the cutout, the well having a well base and at least one well sidewall which forms an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body, the at least one well sidewall extending above the surface and across the edge such that a defined distance of the surface is covered by the at least one well sidewall; producing a second auxiliary layer within the well at the well base and at the at least one well sidewall, the first auxiliary layer and the second auxiliary layer forming a common surface at an identical surface level, the second auxiliary layer comprising a different material than the first auxiliary layer; and selectively removing regions of the first auxiliary layer which are not covered by the second auxiliary layer.