Image pickup apparatus and image pickup system

摘要

One or more embodiments relate to an image pickup apparatus including multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit, and an amplifier which outputs a signal based on charge generated by the photoelectric-conversion unit. Within an electric path between the photoelectric-conversion unit and an input node of the amplifier, there are disposed a first holder, a second holder disposed following the first holder, a first transfer unit which transfers charge to the first holder, a second transfer unit which transfers charge of the first holder to the second holder, and a third transfer unit which transfers charge of the second holder. The first holder includes a first-conductive-type first semiconductor region holding charge. The second holder includes a first-conductive-type second semiconductor region holding charge. Impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region.

主权项

1. An image pickup apparatus comprising:
a plurality of pixels; wherein each of the plurality of pixels includes
a photoelectric conversion unit, andan amplifier element configured to output a signal based on charge generated by the photoelectric conversion unit; wherein, within an electric path between the photoelectric conversion unit and an input node of the amplifier element, there are disposed a first holding unit, a second holding unit disposed in a subsequent stage of the first holding unit, a first transfer unit configured to transfer charge to the first holding unit, a second transfer unit configured to transfer charge of the first holding unit to the second holding unit, and a third transfer unit configured to transfer charge of the second holding unit; wherein the first holding unit includes a first conductive-type first semiconductor region which holds charge; wherein the second holding unit includes a first conductive-type second semiconductor region which holds charge; and wherein impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region.