| 发明名称 | Single photoresist approach for high challenge photo process | ||
| 摘要 | A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time. | ||
| 申请公布号 | US8778602(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US200912562248 | 申请日期 | 2009.09.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Pan Hung-Ting;Chen Jing-Huan;Ma Wei-Chung;Chiang Hsin-Chun;Cheng Po-Chung;Wu Szu-An |
| 分类号 | G03F7/30 | 主分类号 | G03F7/30 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of lithography patterning, comprising: coating a resist layer on a substrate, wherein the resist layer comprises acid labile units such that a resist dissolving rate is between about 0.01 and about 0.05 nm/sec; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time. | ||
| 地址 | Hsin-Chu TW | ||