Method of manufacturing flash memory cell

摘要

A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.

主权项

1. A method of manufacturing flash memory cell comprising steps of:
providing a substrate having a memory region and a logic region defined thereon; forming a plurality of shallow trench isolations (STIs) in the substrate; forming at least a first gate respectively in the memory region and the logic region; forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the first gates respectively in the memory region and the logic region; forming a dielectric layer on the substrate; forming a second gate at least on outer sides of the ONO spacers in the memory region; forming a plurality of isolating patterns on the substrate; and performing an etching process to etch the second gate through the isolating patterns.