发明名称 Method of fabricating a neutron detector such as a microstructured semiconductor neutron detector
摘要 A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles. The material is responsive to neutrons absorbed, thereby, for releasing ionizing radiation reaction products.
申请公布号 US8778715(B2) 申请公布日期 2014.07.15
申请号 US201313924839 申请日期 2013.06.24
申请人 Radiation Detection Technologies, Inc. 发明人 Bellinger Steven L.;Fronk Ryan G.;McGregor Douglas S.
分类号 H01L21/00;H01L31/115;H01L31/18;B82Y40/00 主分类号 H01L21/00
代理机构 Brooks Kushman P.C. 代理人 Brooks Kushman P.C.
主权项 1. A method of making a neutron detector, the method comprising: providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface; and filling the plurality of cavities with a neutron-responsive material, the step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and at a rotational velocity sufficient to backfill the cavities with the nanoparticles, the material being responsive to neutrons absorbed thereby for releasing ionizing radiation reaction products.
地址 Manhattan KS US