Semiconductor structure and manufacturing method thereof

摘要

A semiconductor structure includes a device, a conductive pad on the device, and a Ag1-xYx alloy bump over the conductive pad. The Y of the Ag1-xYx bump comprises metals forming complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag1-xYx alloy bump is in a range of from about 0.005 to about 0.25. A difference between one standard deviation and a mean value of a grain size distribution of the Ag1-xYx alloy bump is in a range of from about 0.2 μm to about 0.4 μm. An average grain size of the Ag1-xYx alloy bump on a longitudinal cross sectional plane is in a range of from about 0.5 μm to about 1.5 μm.

主权项

1. A semiconductor structure, comprising:
a device; a conductive pad on the device; a Ag1-xYx alloy bump over the conductive pad; and a seed layer between the conductive pad and the Ag1-xYx alloy bump, wherein the seed layer comprises Ag, wherein the Y of the Ag1-xYx bump comprises metals forming complete solid solution with Ag at arbitrary weight percentage, and wherein the X of the Ag1-xYx alloy bump is in a range of from about 0.005 to about 0.25.