Solid-state image pickup element and image pickup apparatus

摘要

Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

主权项

1. A solid-state image pickup element with a plurality of pixels, comprising, for at least one pixel:
a photoelectric conversion region; at least one transistor; an isolation region of a first conductivity type configured to isolate said photoelectric conversion region and said at least one transistor from each other; a well region of the first conductivity type having said photoelectric conversion region, said at least one transistor, and said isolation region of the first conductivity type formed therein; a contact portion on said isolation region of the first conductivity type configured to supply an electric potential used to fix said well region of the first conductivity type to a given electric potential; and an impurity region of the first conductivity type extending in a depth direction from a surface of said isolation region of the first conductivity type in said isolation region of the first conductivity type between said contact portion and said photoelectric conversion region, and having a sufficiently higher impurity concentration than that of said isolation region of the first conductivity type.