| 摘要 |
To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type Al x Ga 1-x N layer (0 ‰¤ x < 1) on the buffer side, and an Al z Ga 1-z N adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first Al x Ga 1-x N layer (x - 0.05 ‰¤ z ‰¤ x + 0.05, 0 ‰¤ z < 1) is provided between the buffer and the functional laminate. |
