APPARATUS FOR TREATING SUBSTRATE USING PLASMA

摘要

The present invention provides an apparatus for treating a substrate using plasma. The apparatus for treating a substrate includes a chamber provided therein with a processing space; a support unit provided at the processing space to support the substrate; a gas supply unit to supply a process gas into the processing space; a plasma source to generate plasma from the processing gas provided in the processing space; and an observation unit to observe the processing space. The observation unit includes a window to block an imaging hole formed at a sidewall of the chamber and a camera to shoot the processing space through the imaging hole in an outer side of the window. Accordingly, an inside of the chamber may be precisely observed.