发明名称 POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION HAVING IMPROVED THEMAL-RESISTANCE AND HIGH SENSITIVITY AND FORMING METHOD OF PATTERN OF SEMICONDUCTOR DEVICE
摘要 <p>A positive type photosensitive resin composition according to an embodiment of the present invention is capable of being patterned with high sensitivity and high resolution, is applicable to a refined semiconductor device process and is able to be used for forming a surface protective film, an interlayer insulation film and the like of a display substrate and a semiconductor device since thermal resistance and electrical insulation are excellent. Additionally, the protective film, the interlayer insulation film and the like formed by the photosensitive resin composition exhibit excellent vertical characteristics of a pattern.</p>
申请公布号 KR20140088977(A) 申请公布日期 2014.07.14
申请号 KR20120158292 申请日期 2012.12.31
申请人 KOREA KUMHO PETROCHEMICAL CO., LTD. 发明人 HONG, SEUNG HEE;LEE, SOO HEE;KIM, SANG AH;NOH, BYEONG IL
分类号 G03F7/039;G03F7/016;G03F7/26;H01L21/027 主分类号 G03F7/039
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