发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME |
摘要 |
A high electron mobility transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V compound layer having a third band gap over the second III-V compound layer, wherein the third band gap is greater than the first band gap. A gate electrode is formed over the third III-V compound layer. A source region and a drain region are over the third III-V compound layer and on opposite sides of the gate electrode. |
申请公布号 |
KR20140089280(A) |
申请公布日期 |
2014.07.14 |
申请号 |
KR20130042750 |
申请日期 |
2013.04.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIANG CHEN HAO;LIU PO CHUN;CHIU HAN CHIN;CHEN CHI MING;YU CHUNG YI |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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